Publications

27.   Grant J, Abernathy G, Olorunsola O, Ojo S, Amoah S, Wanglia E, Saha SK, Sabbar A, Du W,
Alher M, Li B–H, Yu S–Q, “Growth of Pseudomorphic GeSn at Low Pressure with Sn
Composition of 16.7%“, Materials. 14(24), 7637 (2021). (MURI full support).

26.    Xiaochen Jin, Shunda Chen, and Tianshu Li. “Short–range order in SiSn alloy enriched by
second–nearest–neighbor repulsion“. Phys. Rev. Materials, 5, 104606, (2021) (MURI full support).

25.    Serhiy Kondratenko, Petro Lytvyn, Andrian Kuchuk, Fernando Maia de Oliveira, Hryhorii
Stanchu, Volodymyr Lysenko, Marcio D. Teodoro, Serhiy Malyuta, Shui–Qing Yu, Yuriy I.
Mazur, and Gregory Salamo, “Conductivity–Type Conversion in Self–Assembled GeSn Stripes on
Ge/Si(100) under Electric Field“, ACS Appl. Electron. Mater. 3, 10, 4388–4397 (2021). (Partially
supported by the MURI project).

24.    Tyler McCarthy, Zheng Ju, Stephen Schaefer, Shui–Qing Yu, and Yong–Hang Zhang,
“Momentum(k)–Space Carrier Separation Using SiGeSn Alloys for Photodetector Applications“, J.
Appl. Phys. 130, 223102 (2021). (Partially supported by the MURI project).

23.    Xiaochen Jin, Shunda Chen, and Tianshu Li, “Short–ranged order in SiSn alloy enriched by
second–nearest–neighbor repulsion“, Physical Review Materials 5, 104606 (2021). (Fully
supported by MURI).

22.    Grey Abernathy, Yiyin Zhou, Solomon Ojo, Bader Alharthi, Perry C. Grant, Wei Du, Joe
Margetis, John Tolle, Andrian Kuchuk, Baohua Li, and Shui–Qing Yu, “Study of SiGeSn/GeSn
single quantum well toward high–performance all–group–IV optoelectronics“, Journal of Applied
Physics 129, 093105 (2021) (MURI partial support).

21.    Hryhorii V Stanchu, Andrian V Kuchuk, Yuriy I Mazur, Krishna Pandey, Fernando M de
Oliveira, Mourad Benamara, Marcio D Teodoro, Shui–Qing Yu, and Gregory J Salamo,
“Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in
Thermally Annealed GeSn Epilayers“, Cryst. Growth Des. 21, 1666−1673, (2021). (MURI full
support).

20.    Derenko, S. Kondratenko, O. Datsenko, Yu. I. Mazur, Shui–Qing Yu, and G. J. Salamo “Lateral
photoconductivity of GeSn alloys“, Proc. SPIE 11680, Physics and Simulation of Optoelectronic
Devices XXIX, 1168008, (2021). (MURI partial support).

19.    E. Chang, S.–Q. Yu, J. Liu, H. H. Cheng, R. A. Soref, and G. Sun, “Achievable performance of
uncooled homojunction GeSn mid–infrared photodetectors“, IEEE Selected Topics in Quantum
Electronics (published online, doi: 10.1109/JSTQE.2021.3065204.) (MURI partial support)

18.    Y. Chang, R. Bansal, K.–C. Lee, G. Sun, R. Soref, H. H. Cheng, and G.–E. Chang, “Planar GeSn
lateral p–i–n resonant–cavity–enhanced photodetectors for short–wave infrared integrated
photonics“, Optics Letters 46, 3316–3319, (2021). (Partially supported by the MURI project).

17.    D. Hsieh, J.–H. Lin, R. A. Soref, G. Sun, H. H. Cheng, and G.–E Chang, “Electro–absorption
modulation in GeSn alloys for wide–spectrum mid–infrared applications“, Communications
Materials 2, 40, (2021). (Partially supported by the MURI project).

16.    Z Ying and R Soref, “Electro–optical logic using dual–nanobeam Mach–Zehnder interferometer
switches“, Optics Express 29 (9), 12801–12812, (2021). (Partially supported by the MURI
project).

15.    Gostimirovic, R. Soref, and N. Y. Winnie, “Resonant bistable 2× 2 crossbar switches using dual
nanobeams clad with phase–change material“, OSA Continuum 4 (4), 1316–1325, (2021).
(Partially supported by the MURI project).

14.    F. De Leonardis, V. M. N. Passaro, “Compact resonant 2× 2 crossbar switch using three coupled
waveguides with a central nanobeam“, Optics Express 29 (6), 8751–8762, (2021). (Partially
supported by the MURI project).

13.    Olorunsola, O.; Stanchu,H.; Ojo, S.; Pandey, K.; Said, A.;Margetis, J.; Tolle, J.; Kuchuk,
A.;Mazur, Y.I.; Salamo, G. and Shui–Qing Yu. “Impact of Long–Term Annealing
on Photoluminescence from Ge1–xSnx Alloys“, Crystals, 11, 905, (2021). (MURI full support).

41.    Oluwatobi Olorunsola, Abdulla Said, Solomon Ojo, Hryhorii Stanchu, Grey Abernathy, Sylvester
Amoah, Samir Saha, Emmanuel Wangila, Joshua Grant, Sudip Acharya, Lucas Miller, Kyle
Rosler, Yue–Tong Jheng, Guo–En Chang, Baohua Li, Gregory J Salamo, Shui–Qing (Fisher)
Yu and Wei Du, “SiGeSn Quantum Well for Photonics Integrated Circuits on Si Photonics
Platform“: A Review, J. Phys. D: Appl. Phys., 55, 443001, (2022). (Partially supported by the
MURI project).

40.    Xiaochen Jin, Shunda Chen, Tianshu Li, “Coexistence of two types of short–range order in Si–
Ge–Sn medium–entropy alloys“, Communications Materials 3:66, (2022). (MURI full support).

39.    G. Sun, R. A. Soref, J. B. Khurgin, S.–Q. Yu, and Guo–En Chang, “Longwave IR lattice matched
L–valley Ge/GeSiSn waveguide quantum cascade detector“, Optics Express, 30, 23, 42385–42393,
(2022). (Partially supported by the MURI project).

38.    Grey Abernathy, Solomon Ojo, Joshua M. Grant, Yiyin Zhou, Wei Du, Andrian Kuchuk, Baohua
Li, and Shui–Qing Yu, “Study of critical optical confinement factor for GeSn–based multiple
quantum well lasers“, Appl. Phys. Lett., 121, 171101 (2022). (Partially supported by the MURI
project).

37.    Shang Liu, Alejandra Cuervo Covian, Xiaoxin Wang, Cory T. Cline, Austin Akey, Weiling
Dong, Shui–Qing Yu, Jifeng Liu, “3D Nanoscale Mapping of Short–Range Order in GeSn Alloys“,
Small Methods, 6, 2200029, (2022). (MURI full support).

36.    Solomon Ojo, Yiyin Zhou, Sudip Acharya, Nicholas Saunders, Sylvester, Amoah, Yue–Tong
Jheng, Huong Tran, Wei Du, Guo–En Chang, Baohua Li, Shui–Qing Yu, “Silicon–based
electrically injected GeSn lasers“, Proc. SPIE 11995, Physics and Simulation of Optoelectronic
Devices XXX, 119950B (2022). (MURI full support).

35.    Yiyin Zhou, Solomon Ojo, Chen–Wei Wu, Yuanhao Miao, Huong Tran, Joshua M. Grant, Grey
Abernathy, Sylvester Amoah, Jake Bass, Gregory Salamo, Wei Du, Guo–En Chang, Jifeng Liu,
Joe Margetis, John Tolle, Yong–Hang Zhang, Greg Sun, Richard A. Soref, Baohua Li, and
Shui–Qing Yu, “Electrically injected GeSn lasers with peak wavelength up to 2.7 μm“, Photon.
Res. 10, 222–229 (2022). (Partially supported by the MURI project).

34.    Kuchuk A, Lytvyn P, Mazur Yu, Stanchu H, Kondratenko S, Oliveira F, Malyuta S, Teodoro M,
Benamara M, Yu S–Q, Salamo G, “Sn–guided self–grown Ge stripes banded by GeSn Nanowires:
Formation mechanism and electric–field–induced switching from p– to n–type conduction“, Applied
Surface Science. 604, 154443 (2022). (Partially supported by the MURI project).

33.    Oluwatobi Olorunsola, Solomon Ojo, Grey Abernathy, Yiyin Zhou, Sylvester Amoah, P C Grant,
Wei Dou, Joe Margetis, John Tolle, Andrian Kuchuk, Wei Du, Baohua Li, Yong–Hang Zhang
and Shui–Qing Yu, “Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced
well emission“, Nanotechnology. 33, 085201 (2022). (Partially supported by the MURI project).

32.    Oluwatobi Olorunsola, Hryhorii Stanchu, Solomon Ojo, Emmanuel Wangila, Abdulla Said,
Mohammad Zamani–Alavijeh, Gregory Salamo, Shui–Qing Yu, “Optical and structural properties
of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics“, Journal of Crystal Growth.
588, 126675 (2022). (MURI full support).

31.    Oluwatobi Olorunsola, Abdulla Said, Solomon Ojo, Grey Abernathy, Samir Saha, Emmanuel
Wangila, Joshua Grant, Hryhorii Stanchu, Sudip Acharya, Wei Du, Yue–Tong Jheng, Guo–En
Chang, Baohua Li, Gregory Salamo, and Shui–Qing Yu, “Enhanced carrier collection efficiency
of GeSn single quantum well towards all–group–IV photonics applications“, Journal of Physics D:
Applied Physics. 55, 305101 (2022). (Partially supported by the MURI project).

30.    Shang Liu, Alejandra Cuervo Covian, Jules A. Gardener, Austin Akey, Barnaby D.A. Levin,
Xiaoxin Wang, and Jifeng Liu, “Growth of α–Sn on silicon by a reversed β–Sn to α–Sn phase
transformation for quantum material integration“, Communications Materials 3, 17 (2022)
(Partially supported by the MURI project).

29.    S. Ghosh, R. Bansal, G. Sun, R. A. Soref, H.–H. Cheng, and G.–E. Chang, “Design Considerations
of GeSn Waveguide Photodetectors for 2–μm Band Silicon Photonics“, Sensors 22, 3978 (2022)
(Partially supported by the MURI project).

28.    C. Chang, H.–H. Cheng, G. A Sevison, J. R. Hendrickson, Z. Li, I. Agha, J. Mathews, R. A.
Soref, and G. Sun, “Power–Dependent Investigation of Photo–Response from GeSn–Based p–i–n
Photodetector Operating at High Power Density“, Materials 15, 989 (2022) (Partially supported
by the MURI project).

58. KM Anagnost, X Wang, J Liu, ER Fossum, 2023 International Image Sensor Workshop (IISW), “Towards Infrared Spectral Extension of CMOS Image Sensors”; https://imagesensors.org/Past%20Workshops/2023%20Workshop/2023%20Papers/P21.pdf

57. Kaitlin M. Anagnost, Xiaoxin Wang, Jifeng Liu, Eric R. Fossum, “Towards Infrared Spectral Extension of CMOS Image Sensors,” International Image Sensor Society (2023). (MURI full support)

56. Nirosh M. Eldose, Hryhorii Stanchu, Subhashis Das, Ilias Bikmukhametov, Chen Li, Satish Shetty, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo, “Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge_1-xSn_x Epilayers Grown by MBE at Different Temperatures,”s Crystal Growth & Design 23, 7737-7743 (2023). (MURI full support)

55. Grey Abernathy, Solomon Ojo, Abdulla Said, Joshua M. Grant, Yiyin Zhou, Hryhorii Stanchu, Wei Du, Baohua Li, Shui‑Qing Yu, “Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission,” Scientific Reports 13, 18515 (2023). (Partially supported by the MURI project).

54. Hryhorii Stanchu, Abdulla Said, Oluwatobi Olorunsola, Sudip Acharya, Sylvester Amoah, Mohammad Zamani-Alavijeh, Fernando M. de Oliveira, Santosh Karki Chhetri, Jin Hu, Yuriy I. Mazur, Shui-Qing Yu, Gregory Salamo, “Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers,” Journal of Vacuum Science & Technology B 41, 52208 (2023). (MURI full support).

53. V.G. Chizmeshya, N. Masoumi, “Composition and strain dependence of intrinsic and substitutional defect formation energies in SnGe alloys,” Results in Surfaces and Interfaces 12, 100125 (2023). (MURI full support)

52. G.-E. Chang, S.-Q. Yu, and G. Sun, “GeSn Rule-23” for the Performance Limit of GeSn Infrared Photodiodes,” Sensors 23, 7386 (2023). (Partially supported by the MURI project)

51. S. Ghosh, G. Sun, T. A. Morgan, G. T. Forcherio, H. H. Cheng, and G.-E. Chang, “Dark Current Analysis on GeSn p-i-n Photodetectors,” Sensors 23, 7386 (2023) (Partially supported by the MURI project)

Under Review or In-Preparation

50.    Guo–En Chang, Shui–Qing Yu, and Greg Sun, “GeSn Rule–23” for the Performance Limit of
GeSn Infrared Photodiodes”, submitted to IEEE Sensors.

49.    Xiaoxin Wang, and Jifeng Liu, “Perspective of Si active photonics for data communication and
image imaging”, Draft in revision, Invited Perspective, Journal of Applied Physics.

48.    A.V.G. Chizmeshya and N. Masoumi, “First Principles Study of the Structure, Thermodynamics
and Reaction Thermochemistry of Chlorinated Germaness, Stananes and their Radicals”, in
preparation.

47.    Song, W.-J. Fan, C. S. Tan, Q. Wang, D. Nam, D. H. Zhang, and G. Sun, “Strain effects on phase-filling singularities in the optical dielectric function of highly doped n-type Ge”, submitted to New Journal of Physics (Partially supported by the MURI project).

46.    N. Masoumi and A.V.G. Chizmeshya, “Ab initio thermodynamics studies of stability of strained
Ge–Sn alloys”, in preparation.

45.    N. Masoumi and A.V.G. Chizmeshya, “Thermodynamics of non–isomorphism in Si1–xSnx and
Ge1–xSnx alloys”, in preparation.

44.    Nirosh M. Eldose, Calbi. Gunder, Hryhorii Stanchu, Chen Li, Fernando Maia de Oliveira, Yuriy
I. Mazur, Mourad Benamara, Shui–Qing Yu, Gregory J. Salamo, “Growth of Sn–rich Ge1–xSnx
nanostructures on InAs (001) substrate”, in preparation.

43.    Hryhorii Stanchu, Nirosh M. Eldose, Chen Li, Shui–Qing Yu, Gregory Salamo, “X–ray
diffraction study of Sn incorporation in compositionally graded Ge1–xSnx epilayers grown by
MBE”, in preparation.

Published

42.    Solomon Ojo, Hryhorii Stanchu, Sudip Acharya, Abdulla Said, Sylvester Amoah, Mourad
Benamara, Chen Li, Fernando M. de Oliveira, Yuriy I. Mazur, Shui–Qing Yu, Gregory Salamo,
“Depth–dependent photoluminescence characteristic of GeSn/SiGeSn multi–quantum wells“,
Journal of Crystal Growth, 605, 127062, (2023). (MURI full support).

76. Xiaochen Jin, Shunda Chen, and Tianshu Li, Enabling Type I Lattice-Matched Heterostructures in SiGeSn Alloys Through Engineering Composition and Short-Range Order: A First-Principles Perspective, IEEE Journal of Selected Topics in Quantum Electronics, Accepted (2024). (MURI full support)

75. Shang Liu, Yunfan Liang, Haochen Zhao, Nirosh M. Eldose, Jin-Hee Bae, Omar Concepcion, Xiaochen Jin, Shunda Chen, Ilias Bikmukhametov, Austin Akey, Cory T. Cline, Alejandra Cuervo Covian, Xiaoxin Wang, Tianshu Li, Yuping Zeng, Dan Buca, Shui-Qing Yu, Gregory J. Salamo, Shengbai Zhang, Jifeng Liu, Comparison of Short-Range Order in GeSn Grown by Molecular Beam Epitaxy and Chemical Vapor Deposition, Nature Communications, Submitted (2024). (Partially supported by the MURI project)

74. Polymorphism in Sn_xGe_1-x Alloys: A First Principles Thermodynamics Treatment, Submitted to Applied Physics Letters (2024) (manuscript #APL24-AR-07078).

73. Density Functional Theory Study of the Compositional dependence finite strain in Ge-Sn alloys on Ge(100), Submitted to Solid State Communications (2024) (manuscript #SSC-D-24-00674).

72. Emmanuel Wangila, Calbi Gunder, Petro M Lytvyn, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Hryhorii Stanchu, Aida Sheibani, Yuriy I Mazur, Shui-Qing Yu, Gregory Salamo, The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire, Crystals 14(5), 414 (2024). (Partially supported by the MURI project).

71. Shang Liu, Jin-Hee Bae, Xiaochen Jin, Shunda Chen, Omar Concepcion, Ilias Bikmukhametov, Jonathan D. Poplawsky, Alejandra Cuervo Covian, Xiaoxin Wang, Cory T. Cline, Austin Akey, Lilian M. Vogl, Haochen Zhao, Yuping Zeng, Andrew M. Minor, Dan Buca, Shui-Qing Yu, Tianshu Li, Jifeng Liu, Atomic Short-Range Order in SiGeSn alloys, Submitted to Nature Materials (2024).

70. Shang Liu, Shangda Li, Jules A. Gardener, Austin Akey, Xiaoxue Gao, Xiaoxin Wang, and Jifeng Liu: “Phase-pure α-Sn quantum material on Si seeded by a 2 nm-thick Ge Layer”  (being submitted to Nano Letters, March 2024).

69. Shang Liu, Yunfan Liang, Haochen Zhao, Nirosh M. Eldos, Jin-Hee Bae, Omar Concepcion, Ilias Bikmukhametov, Alejandra Cuervo Covian, Xiaoxin Wang, Cory T. Cline, Austin Akey, Yuping Zeng, Dan Buca,  Gregory J. Salamo, Shui-Qing Yu, Shengbai Zhang, and Jifeng Liu. “Comparison of Short-Range Order in GeSn thin films Grown by Molecular Beam Epitaxy vs. Chemical Vapor Deposition” (being submitted to Small Methods, March 2024) (Atom probe tomography analyses of some early CVD and MBE GeSn samples were supported under MURI)

68. M.-H. Chou, R. Bansal, Y.-T. Jheng, G. Sun, W. Du, S.-Q. Yu, and G.-E. Chang, “High-detectivity GeSn shortwave infrared photodetectors for sensitive infrared spectroscopy,” submitted to Advanced Optical Materials

67. Ghosh, G. Sun, S.-Q. Yu, and G.-E. Chang, “Impact of carrier momentum (k)-space separation on GeSn infrared photodetectors,”  invited paper submitted to the focus issue of IEEE Journal of Selected Topics in Quantum Electronics.

66. Sylvester Amoah, Hryhorii Stanchu, Grey Abernathy, Serhii Kryvyi, Fernando M. De Oliveira, Yuriy I. Mazur, Shangda Li, Shang Liu, Jifeng Liu, Wei Du, Baohua Li, Gregory Salamo, Shui-Qing Yu, “The effects of ion implantation with arsenic and boron in germanium-tin layers,” Journal of Vacuum Science & Technology B, Submitted (2/21/2024). (Partially supported by the MURI project)

65. Joshua Grant, Enbo Yang, Narges Masoumi, Alexander Golden, Joe Margetis, Andrew Chizmeshya, Wei Du, Shui-Qing Yu, “In Situ Mass Spectrometric Investigation to Probe GeSn Growth Dynamics and Mechanisms in the Chemical Vapor Deposition Processes,” Journal of Vacuum Science & Technology B, Submitted (2/21/2024). (Partially supported by the MURI project)

Under Review or In-Preparation

64. Shang Liu, Jin-Hee Bae, Xiaochen Jin, Shunda Chen, Omar Concepcion, Ilias Bikmukhametov, Jonathan D. Poplawsky, Alejandra Cuervo Covian, Xiaoxin Wang, Cory T. Cline, Austin Akey, Lilian M. Vogl, Haochen Zhao, Yuping Zeng, Andrew M. Minor, Dan Buca, Shui-Qing Yu, Tianshu Li, Jifeng Liu1* “ Atomic Short-Range Order in SiGeSn alloys” (Under revision to include new analyses and comparison with theoretical predictions). (SRO analyses method and Python code used in this paper was developed under MURI support).

63. Shang Liu, Shangda Li, Alejandra Cuervo Covian, Xiaoxin Wang, Jifeng Liu, “A metastable phase diagram for GeSn thin films and nanostructures”, In preparation (fully supported by MURI)

62. Shang Liu,Yi-Chuan Chou, Xiaoxin Wang, Eric Fossum, and Jifeng Liu, “Back-end-of-line Monolithic Integration of GeSn/Si Short-wave Infrared CMOS Image Sensors”, in preparation.

61. Shangda Li, Shang Liu, Sylvester Amoah, Hryhorii Stanchu, Grey Abernathy, Baohua Li, Xiaoxin Wang, Shuiqing Yu, “Implantation damage recovery and dopant activation in GeSn thin films”, in preparation. 

60. Tyler T. McCarthy, Allison M. McMinn, Xiaoyang Liu, Razine Hossain, Xin Qi, Zheng Ju, and Yong-Hang Zhang. “Molecular Beam Epitaxy Growth and Characterization of GePb alloy” under review Journal of Vacuum Science & Technology B Special Topics: SiGeSn

59. Agnieszka Anna Corley-Wiciak, Shunda Chen, Omar Concepción, Marvin Hartwig Zoellner, Detlev Grützmacher, Dan Buca, Tianshu Li, Giovanni Capellini, Davide Spirito, “Local alloy order in a Ge_1-xSn_x/Ge epitaxial layer”, in preparation, (2024).

108. Justin Rudie, Sylvester Amoah, Xiaoxin Wang, Rajesh Kumar, Grey Abernathy, Steven Akwabli, Perry C. Grant, Jifeng Liu, Baohua Li, Wei Du, Shui-Qing Yu, Monolithic GeSn APD with extended SWIR response, In preparation, to be submitted to Optica. (Partially supported by the MURI project).

107. Haochen Zhao, Shang Liu, Suho Park, Xu Feng, Zhaoquan Zeng, James Kolodzey, Shui-Qing Yu, Jifeng Liu, and Yuping Zeng, Composition Quantification of SiGeSn Alloys through Time-of-Flight Secondary Ion Mass Spectrometry: Calibration Methodologies and Validation with Atom Probe Tomography, Submitted to IEEE Journal of Selected Topics in Quantum Electronics on SiGeSn Infrared Photonics and Quantum Electronics, Under 2nd Review. (Partially supported by the MURI project).

106. Robin Scott, Sudip Acharya, Wei Du, Bria Collier, Abdulla Ali, Aslec Fischer, Nick Rosson, and Shui-Qing Yu, Development of GeSn epitaxial films with strong direct bandgap luminescence in the MWIR region using a commercial CVD reactor, Submitted to JVST-B, Under 2nd Review. (Partially supported by the MURI project.

105. Diandian Zhang, Nirosh M. Eldose, Dinesh Baral, Hryhorii Stanchu, Wei Du, Gregory J. Salamo, and Shui-Qing Yu. GeSn Alloys with 21.7% Sn Grown by Effusion Cell Molecular Beam Epitaxy, in preparation.

104. Dushyant Singh, Chandan Bhai Patel, Samir Ranjan Sahoo, Calbi Gunder, Samir K Saha, Ranjan K Singh, Rahul Kumar, Shui-Qing Yu, Gregory J Salamo, and Krista R Khiangtel, Temperature-dependent Raman spectroscopy analysis of epitaxially grown Ge₉₁Sn_0.09 on GaAs (001) substrate, Submitted.

103. Nirosh M. Eldose, Diandian Zhang, Dinesh Baral, Fernando Maia de Oliveira, Hryhorii Stanchu, Mohammad Zamani-Alavijeh, Yuriy I. Mazur, Wei Du, Shui-Qing Yu, and Gregory J. Salamo. Epitaxial growth of GeSn with high Sn content of 15% & 23% on Ge (001) substrate using MBE, in preparation.

102. Nirosh M. Eldose, Dinesh Baral, Diandian Zhang, Fernando Maia de Oliveira, Hryhorii Stanchu, Mohammad Zamani-Alavijeh, Yuriy I. Mazur, Shui-Qing Yu, and Gregory J. Salamo. Study of photoluminescence defect emission levels in MBE grown GeSn-on-Ge(001), in preparation.

101. Diandian Zhang, Nirosh M. Eldose, Dinesh Baral, Hryhorii Stanchu, Wei Du, Gregory J. Salamo, and Shui-Qing Yu. Lattice-Matched, Strain-Free SiGeSn Alloys and SiGeSn/Ge Superlattices Grown by MBE for Si-Compatible Photonic Devices, in preparation.

100. Diandian Zhang, Nirosh M. Eldose, Dinesh Baral, Hryhorii Stanchu, Wei Du, Gregory J. Salamo, and Shui-Qing Yu. High-Quality SiSn Epitaxial Layers on Si by MBE, in preparation.

99. Tyler T. McCarthy, Allison McMinn, Xiaoyang Liu, Razine Hossain, Xin Qi, Zheng Ju, Shui-Qing Yu, and Yong-Hang Zhang. Comparison Study of GeSn Virtual Substrate Oxide Removal, in preparation.

98. Comparitive reactivity of Sn-Ge-Cl-H precursors for Sn_xGe_1-x growth on H:Ge(100) and Cl:Ge(100) substrates, (to be submitted to Thin Solid Films).

97. Thermochemistry of gas phase reactions, stability and properties of {H,Cl,Ge,Sn} molecular precursors for CVD growth of Sn_xGe_1-x alloys, (to be submitted to The Journal of Physical Chemistry A).

96. Tyler T. McCarthy, Manish M. Sharma, Rabindra Basnet, Allison McMinn, Zheng Ju, Dinesh Upreti, Jin Hu, and Yong-Hang Zhang. Exotic Quantum Transport Properties of α-Sn and Dilute Sn_1-xGe_x Thin Films Grown with a Sacrificial MgTe Layer on InSb Subtrate by Molecular Beam Epitaxy, in preparation.

95. Nair A., Chen, S. Jin, X. & Li, T. Impact of Short-Range Ordering on Vacancy Formation in Group-IV Semiconductor Alloys. In preparation. (MURI full support)

94. S. Ghosh, G. Sun, R. Soref, and G-E. Chang. Strategy for achieving high-detectivity mid-infrared photodetection using lattice-matched Ge_1-zSn_z/Si_xGe_1-x-ySn_y heterojunction photodetectors on silicon, under preparation.

93. N. Masoumi, A. V. Chizmeshya. Thermochemistry of gas phase reactions, stability and properties of {H,Cl,Ge,Sn} molecular precursors for CVD growth of Sn_xGe_1-x alloys” (to be submitted to The Journal of Physical Chemistry A).

92. Diandian Zhang, Nirosh M. Eldose, Dinesh Baral, Hryhorii Stanchu, Sudip Acharya, Fernando Maia de Oliveira, Mourad Benamara, Haochen Zhao, Yuping Zeng, Wei Du, Gregory J. Salamo, and Shui-Qing Yu, Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth, submitted to Applied Physics Letters (2025). (MURI full support).

91. Hryhorii Stanchu, Serhii Kryvyi, Fernando M. de Oliveira, Stephen Margiotta, Matthew Cook, Yuriy I. Mazur, Perry C. Grant, Wei Du, Baohua Li, Gregory Salamo, and Shui-Qing Yu. X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping, submitted to Journal of Applied Physics (2025). (Partially supported by the MURI project).

90. Sudip Acharya, Alec Fischer, Nicholas Rosson, Abdulla Said, Hryhorii Stanchu, Quang Minh Thai, Bruce Claflin, Gregory Forcherio, Greg Sun, Robin Scott, Wei Du, Shui-Qing Yu. Chemical Vapor Deposited GeSn for Optically Pumped Lasers Operating at 3.3 μm and 235 K, submitted to Journal of Applied Physics (2025). (Partially supported by the MURI project)

89. Shang Liu, Yunfan Liang, Nirosh M. Eldose, Shunda Chen, Haochen Zhao, Jin-Hee Bae, Omar Concepcion, Xiaochen Jin, Fernando M. de Oliveira, Ilias Bikmukhametov, Xiaoxin Wang, Tianshu Li, Yuping Zeng, Dan Buca, Shui-Qing Yu, Gregory J. Salamo, Damien West, Shengbai Zhang, Jifeng Liu. Atomic short-range order control of GeSn as a new degree of freedom for band engineering, to be submitted to Science Advances.

88. Tyler T. McCarthy, Allison McMinn, Xiaoyang Liu, Razine Hossain, Xin Qi, Zheng Ju, Jifeng Liu, David J. Smith, David Jaeger, Shui-Qing Yu, and Yong-Hang Zhang. Molecular Beam Growth and Short Range Order Effect in SiGeSn Digital Alloys and Superlattices, under review Applied Physics Letters.

87. Fernando Maia de Oliveira, Nirosh M. Eldose, Dinesh Baral, Hryhorii Stanchu, Serhii Kryvyi, Diandian Zhang, Mohammad Zamani-Alavijeh, Mourad Benamara, Yuriy I Mazur, Wei Du, Shui-Qing Yu, Gregory J Salamo. Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn, accepted by Crystal Growth & Design (2025). (MURI full support).

86. Xiaoxin Wang, Tianshu Li, Juejun Hu and Jifeng Liu. Perspectives of active Si photonics devices for data communication and optical sensing, to be published in J. Appl. Phys. in Aug. 2025 (Editor’s Pick).

85. N. Masoumi, A. V. Chizmeshya. Density Functional Theory Study of the Compositional dependence finite strain in Ge_1-xSn_x alloys on Ge (100), Solid State Communication, 404, 116021 (2025).

84. Meng-Hsien Chou, Radhika Bansal, Yue-Tong Jheng, Greg Sun, Wei Du, Shui-Qing Yu, and Guo-En Chang. High-Detectivity GeSn Mid-Infrared Photodetectors for Sensitive Infrared Spectroscopy, Adv. Photonics Res. 6, 2400155 (2025). (Partially supported by the MURI project).

83. Nirosh M Eldose, Fernando Maia de Oliveira, Serhii Kryvyi, Hryhorii Stanchu, Dinesh Baral, Diandian Zhang, Shang Liu, Yicheng Wang, Jifeng Liu, Mourad Benamara, Mohammad Zamani-Alavijeh, Ilias Bikmukhametov, Yuriy I Mazur, Wei Du, Shui-Qing Yu, Gregory J Salamo. MBE growth and characterization of strained GeSn/Ge multiple quantum well structures, J. Phys. D: Appl. Phys. 58, 225111 (2025). (MURI full support).

82. Sudip Acharya, Hryhorii Stanchu, Rajesh Kumar, Solomon Ojo, Murtadha Alher, Mourad Benamara, Guo-En Chang, Baohua Li, Wei Du, Shui-Qing Yu. Electrically Injected mid-infrared GeSn laser on Si operating at 140 K, IEEE Journal of Selected Topics in Quantum Electronics 31, 1 (2025). (Partially supported by the MURI project).

81. Emmanuel Wangila, Calbi Gunder, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Aida Sheibani, Yuriy I Mazur, Shui-Qing Yu, and Gregory J Salamo. High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam, Crystals 14(8), 724 (2024). (Partially supported by the MURI project).

80. Shangda Li, Shang Liu, Hryhorii Stanchu, Grey Abernathy, Baohua Li, Shui-Qing Yu, Xiaoxin Wang, and Jifeng Liu. Ion Implantation Damage Recovery in GeSn Thin Films, IEEE Journal of Selected Topics in Quantum Electronics 31, 1-8 (2025). (Partially supported by the MURI project).

79. Joshua Grant, Sudip Acharya, Alexander Golden, Enbo Yang, Hryhorii Stanchu, Guo-En Chang, Greg Sun, Wei Du, Shui-Qing Yu. In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high- quality material with lasing at 2250 nm and 100 K, Opt. Mater. Express 15, 1371-1381 (2025). (Partially supported by the MURI project).

78. Enbo Yang, Joshua M. Grant, Alexander Golden, Joe Margetis, Wei Du, and Shui-Qing Yu. Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes, ECS Journal of Solid State Science and Technology 14, 043010 (2025). (Partially supported by the MURI project).

77. Justin Rudie, Huong Tran, Yang Zhang, Sylvester Amoah, Sudip Acharya, Hryhorii Stanchu, Mansour Mortazavi, Timothy A. Morgan, Gregory T. Forcherio, Greg Sun, Gregory Salamo, Wei Du, and Shui-Qing Yu. Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect, Applied Physics Letters 127, 031102 (2025). (Partially supported by the MURI project).